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bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 1 march 2010 bs170 / mmbf170 n-channel enhancement mode field effect transistor general description these n-channel enhancement mode field effect transistors are produced using fairchild's proprietary, high cell density, dmos technology. these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. they can be used in most applications requiring up to 500ma dc. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. absolute maximum ratings t a = 25c unless otherwise noted thermal characteristics t a = 25c unless otherwise noted symbol parameter bs170 mmbf170 units v dss drain-source voltage 60 v v dgr drain-gate voltage (r gs 1m )60v v gss gate-source voltage 20 v i d drain current - continuous 500 500 ma - pulsed 1200 800 t j , t stg operating and storage temperature range - 55 to 150 c t l maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 300 c symbol parameter bs170 mmbf170 units p d maximum power dissipation derate above 25 c 830 6.6 300 2.4 mw mw/ c r ja thermal resistance, junction to ambient 150 417 c/w g s d d g s to-92 sot-23 bs170 mmbf170 features high density cell design for low r ds(on) . voltage controlled small signal switch. rugged and reliable. high saturation current capability.
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 2 electrical characteristics t a =25 c unless otherwise noted note: 1. pulse test: pulse width 300 s, duty cycle 2.0%. ordering information symbol parameter conditions type min. typ. max. units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 100 aall60 v i dss zero gate voltage drain current v ds = 25v, v gs = 0v all 0.5 a i gssf gate - body leakage, forward v gs = 15v, v ds = 0v all 10 na on characteristics (notes 1) v gs(th) gate threshold voltage v ds = v gs , i d = 1ma all 0.8 2.1 3 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 200ma all 1.2 5 g fs forward transconductance v ds = 10v, i d = 200ma bs170 320 ms v ds 2 v ds(on) , i d = 200ma mmbf170 320 dynamic characteristics c iss input capacitance v ds = 10v, v gs = 0v, f = 1.0mhz all 24 40 pf c oss output capacitance all 17 30 pf c rss reverse transfer capacitance all 7 10 pf switching characteristics (notes 1) t on turn-on time v dd = 25v, i d = 200ma, v gs = 10v, r gen = 25 bs170 10 ns v dd = 25v, i d = 500ma, v gs = 10v, r gen = 50 mmbf170 10 t off turn-off time v dd = 25v, i d = 200ma, v gs = 10v, r gen = 25 bs170 10 ns v dd = 25v, i d = 500ma, v gs = 10v, r gen = 50 mmbf170 10 part number package package type lead frame pin array bs170 to-92 bulk straight d g s bs170_d26z to-92 tape and reel forming d g s bs170_d27z to-92 tape and reel forming d g s bs170_d74z to-92 ammo forming d g s bs170_d75z to-92 ammo forming d g s mmbf170 sot-23 tape and reel
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 3 typical electrical characteristics
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 4 typical electrical characteristics (continued)
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 5 typical electrical characteristics (continued)
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 6
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 7
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 8
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 9
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 10 mechanical dimensions ( to-92 ) to-92 dimensions in millimeters
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 11 sot23-3l packaging configuration: f igure 1.0 c omponents leade r t ape 500mm minimum or 125 em pty pockets tr ailer ta pe 300mm minimum or 75 em pty pock ets sot23-3l tape leader and trailer configuration: f igure 2.0 c over t ape c arrier tape note/comments packaging option sot23-3l packaging information s tandar d (no flow code) d87z packaging type reel size tn r 7" d ia tn r 13" qty per reel/tube/bag 3, 000 10, 000 box dimension (mm) 193x 183 x80 355x 333 x40 max qty per box 15, 000 30, 000 weight per unit (gm) 0. 0082 0. 0082 weight per reel (kg) 0. 1175 0. 4006 sot23-3l unit orientation 3p 3p 3p 3p f63tnr lab el cus tomized lab el e mbosse d carri er tape antis tatic cover tape packaging description: s ot 23-3l par ts ar e s hipped i n tape. t he carrier tape is made from a d issipative (carbon filled) polycarbonate resin. t he cover tape i s a m ultilay er film (hea t activated adhes ive in nature) primarily c omposed o f pol yester film, adhes ive l ayer, seal ant, and anti-static s prayed ag ent. t hes e reeled parts i n s tandard option ar e s hipped with 3, 000 units per 7 " or 177mm diameter reel. t he r eels ar e dark blue in c olor and is made of polystyrene plas tic ( anti- static coated). o ther option c omes in 10,000 units per 13" or 330c m diameter reel. t his and s ome other options ar e des cribed in the p ackaging i nformation table. t hes e f ull reel s are i ndividually labeled and plac ed inside a s tandar d immediate bo x made o f r ecyclable corrugated brown paper w ith a f airchild logo p rinting. o ne box contains f ive reel s maximum. and thes e immediate boxes are plac ed inside a labeled s hipping box which c omes i n different s izes depending on the nu mber of pa rts s hipped. lo t : cb v k 741b 019 f s id: mms z5221b d/c1: d9842ab qt y 1: spec rev: spec : qt y : 3000 d/c2: qt y 2: cp n: 193m m x 183m m x 80m m p izza b ox for s tandard o ption b arcode lab el b arcode l abel 355m m x 333m m x 40m m intermediate c ontainer f or 13" re el option b arcode lab el b arcode l abel s ample f airchi ld s e mic o nduct o r c o rp o r at io n (f 63t nr) sot-23 std tape and reel data ?2001 fairchild semiconductor corporation october 2004, rev. d1
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 12 sot-23 std tape and reel data, continued dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc sot-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 8.0 +/-0.3 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 6.25 min 3.50 +/-0.05 4.0 +/-0.1 4.0 +/-0.1 1.30 +/-0.10 0.228 +/-0.013 5.2 +/-0.3 0.06 +/-0.02 dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 8mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 8mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10. 9 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed sot23-3l embossed carrier tape configuration: figure 3.0 sot23-3l reel configuration: figure 4.0 p1 a0 d1 f w e1 e2 tc wc k0 t b0 d0 p0 p2 october 2004, rev. d1
bs170 / mmbf170 ? n-channel enhancement mode field effect transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com bs170 / mmbf170 rev. e2 13 mechanical dimensions ( sot-23 ) sot-23 dimensions in millimeters
? fairchild semiconductor corporation www.fairchildsemi.com trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. accupower auto-spm build it now coreplus corepower crossvolt ctl current transfer logic deuxpeed ? dual cool? ecospark ? efficientmax ? fairchild ? fairchild semiconductor ? fact quiet series fact ? fast ? fastvcore fetbench flashwriter ? * fps f-pfs frfet ? global power resource sm green fps green fps e-series g max gto intellimax isoplanar megabuck microcoupler microfet micropak micropak2 millerdrive motionmax motion-spm optohit? optologic ? optoplanar ? ? pdp spm? power-spm powertrench ? powerxs? programmable active droop qfet ? qs quiet series rapidconfigure saving our world, 1mw/w/kw at a time? signalwise smartmax smart start spm ? stealth superfet supersot -3 supersot -6 supersot -8 supremos syncfet sync-lock? ? * the power franchise ? tinyboost tinybuck tinycalc tinylogic ? tinyopto tinypower tinypwm tinywire trifault detect truecurrent * p serdes uhc ? ultra frfet unifet vcx visualmax xs? * trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. anti-counterfeiting policy fairchild semiconductor corporation's anti-counterfeiting policy. fairchild's anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support. counterfeiting of semiconductor parts is a growing problem in the industry. all manufacturers of semiconductor products are exp eriencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard p erformance, failed applications, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselves and our cus tomers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or from authorized fairchi ld distributors are genuine parts, have full traceability, meet fairchild's quality standards for handling and storage and provide access to fairchild's full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and will appropriately address any warranty issues t hat may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unauthorized sources. fairchild is committed to combat this glo bal problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i47

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